ionized impurity scattering
英 [ˈaɪənaɪzd ɪmˈpjʊərəti ˈskætərɪŋ]
美 [ˈaɪənaɪzd ɪmˈpjʊrəti ˈskætərɪŋ]
网络 离化杂质散射; 电离杂质散射
双语例句
- The carrier mobility of practical transparent conductive oxide ( TCO) thin film is mainly dominated by ionized impurity scattering.
在实用的透明导电氧化物（TCO）薄膜中，载流子迁移率主要是受电子与掺杂离子之间散射的限制。 - In our simulation model, the scattering mechanisms include acoustic phonon scattering, polar optical phonon scattering, and ionized impurity scattering and so on.
模拟中包含的散射机理主要有声学声子散射、极性光学声子散射、电离杂质散射等。 - The acoustic phonon deformation potential scattering, polar optical phonon scattering, intervalley phonon deformation scattering, ionized impurity scattering and neutral impurity scattering are considered.
在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射。 - In TCO films deposited on high temperature substrates, the ionized impurity scattering and the neutral complex scattering are dominant.
对于较高温度下制备的TCO薄膜，对载流子迁移率起主要作用的散射机制是带电离子散射和电中性复合粒子散射。 - The ionized impurity scattering was the main scattering mechanism at low temperature, while the lattice vibration scattering became dominant at high temperature in SnO2: Sb films.
SnO2：Sb薄膜均为简并半导体，低温下以电离杂质散射为主，高温下以晶格振动散射为主。